High-Transconductance n-Type Si/SiGe Modulation-Doped Field-Effect Transistors
- K. Ismail
- B.S. Meyerson
- et al.
- 1992
- IEEE Electron Device Letters
Publications
Date
Featured collections
Popular topics
12 results for S. Nelson
Undoped SiGe heterostructure field effect transistors
- T.N. Jackson
- S. Nelson
- et al.
- 1993
- Device Research Conference 1993
Thermal stability of undoped strained Si channel SiGe heterostructures
- H. Klauk
- T.N. Jackson
- et al.
- 1996
- Applied Physics Letters
Thermal stability of undoped strained Si channel SiGe heterostructures
- H. Klauk
- T.N. Jackson
- et al.
- 1995
- Applied Physics Letters
Room-temperature electron mobility in strained Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1993
- Applied Physics Letters
Systematics of electron mobility in Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1993
- Applied Physics Letters
Strain relaxation and mosaic structure in relaxed SiGe layers
- P.M. Mooney
- F. Legoues
- et al.
- 1993
- Applied Physics Letters
Electron transport properties of Si/SiGe heterostructures: Measurements and device implications
- K. Ismail
- S. Nelson
- et al.
- 1993
- Applied Physics Letters
Electron cyclotron resonance in silicon/silicon germanium heterostructures
- S.Q. Murphy
- Z. Schlesinger
- et al.
- 1993
- Applied Physics Letters
The status of two-dimensional Si/SiGe heterostructures
- Shelby F. Nelson
- 1993
- JOM