Conference paper
Silicon-on-sapphire for RF Si systems 2000
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
We report on room-temperature electron transport measurements in modulation-doped strained Si/SiGe heterostructures, grown by ultrahigh-vacuum chemical vapor deposition. A high room-temperature mobility is expected in such samples because of the strain-induced splitting of the conduction band in the silicon channel. Record values of over 2600 cm2/V s have been measured, almost twice the theoretical maximum for relaxed silicon.
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
K. Ismail, F. Legoues, et al.
Applied Physics Letters
Mark A. Eriksson, Mark Friesen, et al.
Quantum Information Processing
K. Ismail, B.S. Meyerson, et al.
Applied Physics Letters