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Publication
Applied Physics Letters
Paper
Room-temperature electron mobility in strained Si/SiGe heterostructures
Abstract
We report on room-temperature electron transport measurements in modulation-doped strained Si/SiGe heterostructures, grown by ultrahigh-vacuum chemical vapor deposition. A high room-temperature mobility is expected in such samples because of the strain-induced splitting of the conduction band in the silicon channel. Record values of over 2600 cm2/V s have been measured, almost twice the theoretical maximum for relaxed silicon.