About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters
Paper
Electron transport properties of Si/SiGe heterostructures: Measurements and device implications
Abstract
We report electron transport properties of modulation-doped Si/SiGe at 300 and 77 K. Record mobilities of 2830 and 18 000 cm2/V s at 300 and 77 K, respectively, have been measured. Depending on the spacer layer thickness, the sheet resistance of the Si channel is in the range of 2000-10 000 Ω/ at 300 K and 450-700 Ω/ at 77 K. The low field electron drift velocity is 2-3 (5-10) times higher than the corresponding velocity measured in Si/SiO 2 structures at 300 K (77 K). The saturation velocity is measured to be only 5% higher than in bulk Si, at both 300 and 77 K, but appears at a lower electric field. The effect of the enhanced transport properties in modulation-doped Si/SiGe on device design and performance is investigated.