A 0.6 µm2 256Mb Trench DRAM Cell with Self-Aligned Buried Strap (BEST)
- L.A. Nesbit
- J. Alsmeier
- et al.
- 1993
- IEDM 1993
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11 results for J.A. Mandelman
Anomalous Narrow Channel Effect in Trench-Isolated Buried-Channel P-MOSFET‘s
- J.A. Mandelman
- J. Alsmeier
- 1994
- IEEE Electron Device Letters
Super-halo asymmetric vertical pass transistor design for ultra-dense DRAM technologies
- D. Chidambarrao
- K. McStay
- et al.
- 2003
- VLSI-TSA 2003
0.21 μm2 7F2 trench cell with a locally-open globally-folded dual bitline for 1 Gb/4 Gb DRAM
- C. Radens
- U. Gruening
- et al.
- 1998
- VLSI Technology 1998
SOI MOSFET mismatch due to floating-body effects
- J.A. Mandelman
- F. Assaderaghi
- et al.
- 1997
- IEEE International SOI Conference 1997
Floating-body concerns for SOI dynamic random access memory (DRAM)
- J.A. Mandelman
- J. Barth
- et al.
- 1996
- IEEE International SOI Conference 1996
Complementary visualization and soniflcation of multi-dimensional data
- David A. Rabenhorst
- Edward J. Farrell
- et al.
- 1990
- Electronic Imaging: Advanced Devices and Systems 1990
A visualization tool for the scientist/engineer
- Perry A. Appino
- Edward J. Farrell
- et al.
- 1990
- Electronic Imaging: Advanced Devices and Systems 1990
Challenges and future directions for the scaling of dynamic random-access memory (DRAM)
- Jack A. Mandelman
- Robert H. Dennard
- et al.
- 2002
- IBM J. Res. Dev
High pressure oxidation induced stress in submicron trench structures
- R. Stengl
- H.-J. Timme
- et al.
- 1996
- Applied Physics Letters