A 0.6 µm2 256Mb Trench DRAM Cell with Self-Aligned Buried Strap (BEST)
- L.A. Nesbit
- J. Alsmeier
- et al.
- 1993
- IEDM 1993
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
Date
Featured collections
Popular topics
11 results for J.A. Mandelman
Anomalous Narrow Channel Effect in Trench-Isolated Buried-Channel P-MOSFET‘s
- J.A. Mandelman
- J. Alsmeier
- 1994
- IEEE Electron Device Letters
Super-halo asymmetric vertical pass transistor design for ultra-dense DRAM technologies
- D. Chidambarrao
- K. McStay
- et al.
- 2003
- VLSI-TSA 2003
0.21 μm2 7F2 trench cell with a locally-open globally-folded dual bitline for 1 Gb/4 Gb DRAM
- C. Radens
- U. Gruening
- et al.
- 1998
- VLSI Technology 1998
SOI MOSFET mismatch due to floating-body effects
- J.A. Mandelman
- F. Assaderaghi
- et al.
- 1997
- IEEE International SOI Conference 1997
Floating-body concerns for SOI dynamic random access memory (DRAM)
- J.A. Mandelman
- J. Barth
- et al.
- 1996
- IEEE International SOI Conference 1996
Complementary visualization and soniflcation of multi-dimensional data
- David A. Rabenhorst
- Edward J. Farrell
- et al.
- 1990
- Electronic Imaging: Advanced Devices and Systems 1990
A visualization tool for the scientist/engineer
- Perry A. Appino
- Edward J. Farrell
- et al.
- 1990
- Electronic Imaging: Advanced Devices and Systems 1990
Challenges and future directions for the scaling of dynamic random-access memory (DRAM)
- Jack A. Mandelman
- Robert H. Dennard
- et al.
- 2002
- IBM J. Res. Dev
High pressure oxidation induced stress in submicron trench structures
- R. Stengl
- H.-J. Timme
- et al.
- 1996
- Applied Physics Letters