Publications

73 results for G. Scilla

Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CH_yX_{4 - y}, TMG and AsH₃
- - N.I. Buchan
  - T.F. Kuech
  - et al.
- 1991
- Journal of Crystal Growth
Novel diffusion phenomenon of dopants in silicon at low temperatures
- - M. Wittmer
  - P. Fahey
  - et al.
- 1991
- Physical Review Letters
The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process)
- - N.R. Taskar
  - I.B. Bhat
  - et al.
- 1991
- Journal of Crystal Growth
Carbon doping of GaP, GalnP, and AlinP in metalorganic molecular beam epitaxy using methyl and ethyl precursors
- - T.J. De Lyon
  - J. Woodall
  - et al.
- 1991
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy
- - M.A. Tischler
  - R.M. Potemski
  - et al.
- 1991
- Journal of Crystal Growth
Epitaxial-base double-poly self-aligned bipolar transistors
- - E. Ganin
  - T.C. Chen
  - et al.
- 1990
- IEDM 1990
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- - J.H. Comfort
  - G.L. Patton
  - et al.
- 1990
- IEDM 1990
Sub-30ps ECL circuits using high-f_T Si and SiGe epitaxial base SEEW transistors
- - J.N. Burghartz
  - J.H. Comfort
  - et al.
- 1990
- IEDM 1990
EPI active devices
- - G.L. Patton
  - B.S. Meyerson
  - et al.
- 1990
- Silicon Materials Science and Technology 1990
63-75 GHz f_T SiGe-base heterojunction bipolar technology
- - G.L. Patton
  - J.H. Comfort
  - et al.
- 1990
- VLSI Technology 1990