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Paper
Vibrational modes of defects in GaP
Abstract
Localized vibrational modes of impurities in gallium phosphide are observed in infrared absorption. Tentative assignments for the observed absorption bands are as follows: ωL=453 cm-1 is due to Si Ga, 464 cm-1 to NP or OP 569 cm -1 to 11BGa, and 592 to 10B Ga. Other defect bands are observed at 443, 527, and 606 cm -1. However, present experimental results are not sufficient to permit identification of the impurities. © 1969 The American Institute of Physics.