PaperLow surface recombination velocity and contact resistance using p +/p carbon-doped GaAs structuresT.J. De Lyon, J.A. Kash, et al.Applied Physics Letters
Conference paperEpi-GaAs surface treatment - impact of mixed phases on device performanceAlan C. Warren, J. WoodallECS Meeting 1989
PaperThe formation of Ga1-xAlxAs layers on the surface of GaAs during continual dissolution into Ga-Al-As solutionsM.B. Small, R. Ghez, et al.Applied Physics Letters
Conference paperSurface and interface states for GaAs(100) (1x1) and (4x2)-c(8x2) reconstructionsI.M. Vitomirov, A. Raisanen, et al.Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
