J.H. Stathis, R. Bolam, et al.
INFOS 2005
The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997