Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- Takashi Ando
- Tenko Yamashita
- et al.
- 2015
- IEDM 2015
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6 results for Rajesh Sathiyanarayanan
A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
- Tenko Yamashita
- S. Mehta
- et al.
- 2015
- VLSI Technology 2015
Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
- Shahab Siddiqui
- Min Dai
- et al.
- 2017
- JVSTB
Nitrogen diffusion in hafnia and the impact of nitridation on oxygen and hydrogen diffusion: A first-principles study
- Rajesh Sathiyanarayanan
- Rajan K. Pandey
- et al.
- 2015
- Journal of Applied Physics
Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal-oxide-semiconductor devices
- Rajan K. Pandey
- Rajesh Sathiyanarayanan
- et al.
- 2013
- Journal of Applied Physics
Dielectric properties of Si3-ξGeξN4 and Si3-ξCξN4: A density functional study
- Kanchan Ulman
- Rajesh Sathiyanarayanan
- et al.
- 2013
- Journal of Applied Physics