Two-dimensional quantum states in multi-heterostructures of three constituents

Abstract

A theoretical investigation of quantum effects which can be controlled with an externally applied electric field has been carried out in multi-heterostructures consisting of three constituents: AlSb, GaSb and InAs. The calculations show that the energies of two-dimensional quantum levels, occurring at the InAs and GaSb interfaces, are drastically modified by a field perpendicular to the heterostructures. For the case of GaSb-AlSb-GaSb-InAs-AlSb-InAs, this effect leads to an electric-field-induced semimetal-semiconductor transition. © 1982.