Revanth Kodoru, Atanu Saha, et al.
arXiv
Using high resolution electron beam lithography and reactive ion etching, wires of GaAs/GaAlAs-quantum wells have been fabricated with widths between 5 μm and 0.5 μm. We have investigated the recombination luminescence of the charge carriers in time-resolved spectroscopy as a function of the wire width. We find a strong reduction of the recombination lifetime and a corresponding quenching of the luminescence intensity with decreasing wire width. This can be explained assuming nonradiative recombination via surface-levels as a very fast recombination mechanism. With a simple model we are able to describe the observed behaviour and obtain values for the surface-recombination velocity of about 3×105 cm/s. © 1989.
Revanth Kodoru, Atanu Saha, et al.
arXiv
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Imran Nasim, Melanie Weber
SCML 2024
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME