Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Time development of microstructure and resistivity for very thin Cu films

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The electrical resistance of thin Cu films was measured in the deposition chamber. Copper was deposited on silicon dioxide surfaces to reduce surface pinning or adhesion effects and allow high mobility. The recrystalization effect occurs over a period of hours to hundreds of hours for films of 4.5 to 100 nm thickness.