Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)

Abstract

Silicidation-induced impurity segregation was found to be an excellent method for adjusting the workfunction of NiSi gates. Continuous workfunction control over 300mV was obtained with P, As, and Sb used as gate impurities. Fully depleted silicon-on-insulator devices were fabricated with a tunable V t.