Publication
IEEE T-ED
Paper

Threshold Voltage Characteristics of Depletion-Mode MOSFET's

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Abstract

This paper presents the results of a study of the characteristics of the depletion-mode MOSFET. In particular, it is shown that the threshold voltage of this device is a function of its mode of operation (linear or saturated) due to a change in dominant conduction mechanisms caused by the finite depth of donor impurities in the channel. The effect of these impurities on the short channel behavior of the devices also is examined. Copyright © 1981 by The Institute of Electrical and Electronics Engineers, Inc.

Date

01 Jan 1981

Publication

IEEE T-ED

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