PROCESSING CONCERNS FOR MULTI-LEVEL THIN FILM METALLIZATION.
C. Narayan, J.E. Lewis, et al.
ECS Meeting 1986
This paper describes a unique, highly flexible cost competitive method to fabricate microelectronic packages that require thin film interconnections. The method involves fabricating thin film metal/polymer structures multi-up on a reusable temporary glass carrier; the thin film stack is transferred later onto product substrates of choice. The final product substrate can be silicon, co-fired alumina or glass-ceramic, aluminum nitride, diamond, or a printed wiring board. Optionally, one can also use the released thin film decal as a ftexible high wireability interconnect by itself, as an interposer, or in applications like wafer level testing for known good die (KGD). The thin film wiring structure can be fabricated multi-up on a standardized form factor carrier (independent of the characteristics of the final product substrate) in a thin film interconnect foundry, thus significantly reducing cost both from the economies of scale and full utilization of the thin film factory for a variety of customer needs. © 1995 IEEE
C. Narayan, J.E. Lewis, et al.
ECS Meeting 1986
A. Deutsch, G. Arjavalingam, et al.
ECTC 1994
S.E. Steen, S.J. McNab, et al.
Microlithography 2005
M. Colburn, S.V. Nitta, et al.
AMC 2003