Thermopower and transport properties of AsF₅-doped polyacetylene

Abstract

Measurements of thermoelectric power versus temperature of (CH)x doped with various concentrations of AsF5 are reported. These reflect the semiconductor-metal transition at ∼ 1% doping. The "pristine" thermopower is consistent with the conductivity-derived activation energy of 0.35 eV, and a residual defect/impurity carrier concentration of 0.1%. An analysis of the conductivity based on these data indicates that, while the disorder is certainly important, it is not the cause of the transition. © 1980.