I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Measurements of thermoelectric power versus temperature of (CH)x doped with various concentrations of AsF5 are reported. These reflect the semiconductor-metal transition at ∼ 1% doping. The "pristine" thermopower is consistent with the conductivity-derived activation energy of 0.35 eV, and a residual defect/impurity carrier concentration of 0.1%. An analysis of the conductivity based on these data indicates that, while the disorder is certainly important, it is not the cause of the transition. © 1980.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Kigook Song, Robert D. Miller, et al.
Macromolecules
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering