Thermally stimulated ionic conductivity curves have been used to measure Na+ motion in rf-sputtered SiO2 films. A hyperbolic heating rate, 1/T=1/T0 - at, has been used to simplify data analysis. The energy for Na+ motion depends on bias voltage, on bias polarity, and on atomic defects in SiSingle Bond signSiO2Single Bond signAl samples. Either Al positive or Al negative can be the direction of easy motion, depending on the nature of defects in the SiO2 film. © 1973 American Institute of Physics.