About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
ICPS Physics of Semiconductors 1984
Conference paper
MAGNETOTUNNELING AND MAGNETIC FREEZEOUT IN n** minus GaAs-UNDOPED Al//xGa//1// minus //xAs minus n** plus GaAs CAPACITORS.
Abstract
We have reported the observation of a remarkable periodic structure in the current-voltage (I-V) curves of n** minus GaAs-undoped Al//xGa//1// minus //xAs minus n** plus GaAs capacitors at 1. 6 K in the presence of high magnetic fields. Results were presented for samples oriented perpendicular to the direction of the magnetic field; sixteen periods are observed in this case. We present here results for a sample oriented parallel to the magnetic field; at least thirty periods can be observed for minus 1. 2 V less than V//G less than O V where V//G is the voltage applied to the n** plus GaAs gate. Periodic structure is also seen in capacitance-voltage (C-V) characteristics of SIS capacitors. The mechanism appears to involve sequential LO phonon emission events by ballistic electrons.