Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The transition temperature of TaSe3 is found to decrease for pressures up to 10 kbar at a rate -7.5 ± 0.3×10-5 °K/bar. This unusually large decrease can only be explained by both a pressure induced lattice stiffening and a decrease in the Fermi level density of states. © 1979.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids