Texture transformations in reactive metal films deposited upon amorphous substrates

Abstract

We present results that demonstrate how interfacial reactions between a metal film and substrate during deposition affect microstructural evolution. In particular, we investigate Ti films deposited on amorphous SiO2 using ultrahigh vacuum transmission electron microscopy. Ti films were deposited in situ at room temperature and were examined using Auger electron spectroscopy and transmission electron microscopy. An initial [hk0] preferred orientation developed in films up to 2.5 nm in thickness. Films between 2.5 and 5.0 nm developed a [001] preferred orientation that persisted in films up to 20.0 nm thick. These data, in conjunction with Auger electron spectra and dark-field microscopy, suggest that growth of Ti films on SiO2 is directly affected by reactions at the Ti/SiO2 interface and that this reaction is responsible for the observed change in preferred orientation. © 2001 American Institute of Physics.