William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
We review the topic of self-assembled endotaxial silicide nanowires on silicon. Crystallographic orientation, lattice mismatch and average dimensions are discussed for a variety of systems including Ti, Mn, Fe, Co, Ni, Pt and several rare earths on Si(100), Si(111) and Si(110) surfaces. In situ observations of growth dynamics support a constant-shape growth model, in which length, width and thickness all change in proportion as the nanowire grows, with thermally activated, facet-dependent rates. © 2011 Elsevier B.V. All rights reserved.
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Peter J. Price
Surface Science
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
David B. Mitzi
Journal of Materials Chemistry