Publication
IEEE TNANO
Paper

Temperature Evolution in Nanoscale Carbon-Based Memory Devices Due to Local Joule Heating

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Abstract

Tetrahedral amorphous (ta-C) carbon-based memory devices have recently gained traction due to their good scalability and promising properties like nanosecond switching speeds. However, cycling endurance is still a key challenge. In this paper, we present a model that takes local fluctuations in sp2 and sp3 content into account when describing the conductivity of ta-C memory devices. We present a detailed study of the conductivity of ta-C memory devices ranging from ohmic behavior at low electric fields to dielectric breakdown. The study consists of pulsed switching experiments and device-scale simulations, which allows us for the first time to provide insights into the local temperature distribution at the onset of memory switching.

Date

01 Sep 2017

Publication

IEEE TNANO

Authors

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