J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
The temperature dependence of the magnetization of a light emitting diode having a ferromagnetic contact (spin-LED) is measured from 2 to 300 K in magnetic fields from 30 to 70 kOe and it is found that it originates from the GaAs substrate. The magnetization of GaAs comprises a van Vleck-type paramagnetic contribution to the susceptibility which scales inversely with the band gap of the semiconductor. Thus, the temperature dependence of the band gap of GaAs accounts for the non-linear temperature dependent magnetic susceptibility of GaAs and thus, at large magnetic fields, for the spin-LED. © IOP Publishing Ltd.
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
K.A. Chao
Physical Review B