Temperature dependence of the transconductance in ballistic III-V QWFETs

Abstract

The temperature dependence of the transconductance in IIIV quantum well field-effect transistors is studied using 2-D ballistic device simulations. It is found that the experimental characteristics of the temperature-dependent transconductance are captured by considering ballistic transport only, with no electron-phonon scattering. While the temperature behavior of the transconductance mainly depends on the intrinsic properties of the IIIV devices at low VDS, it is strongly affected by the series resistances at high VDS. Hence, it will be shown that the transconductance at high VDS becomes less temperature dependent as the series resistance decreases. © 2011 IEEE.