Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Conference paper

Surface potential and morphology issues of annealed (HfO 2) x(SiO 2) 1-x gate oxides

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The surface potential variations and the surface morphology of annealed (HfO 2) x(SiO 2) 1-x were investigated by noncontact atomic force microscopy (AFM) in ultrahigh vacuum. The study of the films focused on the compositional and structural characteristics of the phase separation alloy films using x-ray mediated techniques and far infrared spectroscopy. Additional modes of data acquisition included contact potential difference (CPD) and differential capacitance. CPD fluctuations were observed to have a local or fine structure component, which for the Hf-rich samples annealed at higher temperatures, correlated with the microstructure.