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Publication
DRC 2001
Conference paper
Sub-40nm V-groove MOSFETs
Abstract
The V-groove MOSFETs capable of generating high performance transistor characteristics of sub-40 nm was demonstrated. MOSFETs with source and drain separation down to Lg=36 nm exhibiting a definite state of electric characteristics were presented. The output characteristics of 36 nm V-groove MOSFET, the corresponding sub-threshold and transfer characteristics as well as characteristics for V-groove openings were discussed. The intrinsic output resistance was also calculated.