J. Knoch, J. Appenzeller, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We present output and transfer characteristics of single-gated, 36 nm, 46 nm and 56 nm channel length SOI MOSFETs with a V-groove design. For the shortest devices we find transconductances as high as 900 μS/μm and drive currents of 490 μA/μm at Vgs - Vth = 0.6 V. The V-groove approach combines the advantages of a controlled, extremely abrupt doping profile between the highly doped source/drain and the undoped channel region with an excellent suppression of short-channel effects. In addition, our V-groove design has the potential of synthesizing devices in the 10 nm range.
J. Knoch, J. Appenzeller, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R.E. Walkup, Ph. Avouris, et al.
MRS Symposium 1983
Joerg Appenzeller, Joachim Knoch, et al.
IEEE TNANO
R.E. Walkup, R.W. Dreyfus, et al.
CLEO 1983