About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
Structural characterization of porous low-k thin films prepared by different techniques using x-ray porosimetry
Abstract
X-ray porosimetry (XRP) was used to characterize three different types of porous low-k dielectric films, with similar dielectric constant. It was demonstrated that XRP can perceive subtle differences in the pore structures of similar low-k films. It was shown that the porous SiCOH film displays the smallest pore sizes, while porous hydrogensilsesquioxane (HSQ) film has both the highest density wall material and porosity. The results show that porous methylsilsesquioxane (MSQ) film exhibited a broad range of pores with the largest average pore size.