About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
ASMC 2011
Conference paper
Strategies for single patterning of contacts for 32nm and 28nm technology
Abstract
As 193 nm immersion lithography is extended indefinitely to sustain technology roadmaps, there is increasing pressure to contain escalating lithography costs by identifying patterning solutions that can minimize the use of multiple-pass processes. Contact patterning for the 32/28 nm technology nodes has been greatly facilitated by just-in-time introduction of new process enablers that allow the support of flexible foundry-oriented ground rules alongside high-performance technology, without inhibiting migration to a single-pass patterning process. The incorporation of device based performance metrics along with rigorous patterning and structural variability studies were critical in the evaluation of material innovation for improved resolution and CD shrink. Additionally novel design changes for single patterning along new capability in data preparation were both assessed to leverage minimal impact of implementation of a single patterning contact process into the existing 32nm and 28nm technology programs [1]. © 2011 IEEE.