J.A. Barker, D. Henderson, et al.
Molecular Physics
Synchrotron based O 1s and N 1s photoabsorption spectroscopy have been used to determine the composition and thickness of oxynitride films grown in N2O on a Si(100) surface. Core-level photoabsorption spectroscopy is shown to be a very sensitive probe capable of measuring surface coverages lower than 0.1 monolayers of N (6.5×1013 N atoms/cm2). Film composition was monitored as a function of growth to demonstrate the stoichiometry reversal from primarily N terminated surfaces in thin films to nearly pure SiO2 in films thicker than ∼ 20 Å. A sample with a 60 Å oxynitride film was depth-profiled by etching in HF and was shown, via N 1s absorption spectroscopy, to have N segregation within 10 Å above the Si/SiO2 interface.
J.A. Barker, D. Henderson, et al.
Molecular Physics
R.W. Gammon, E. Courtens, et al.
Physical Review B
Imran Nasim, Melanie Weber
SCML 2024
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989