Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Spiral inductors and different types of transmission lines are fabricated by using copper (Cu)-daniascene interconnects and high-resistivity silicon (HRS) or sapphire substrates. The fabrication process is compatible with the concepts of silicon device fabrication. Spiral inductors with 1.4-nH inductance have quality factors (Q) of 30 at 5.2 GHz and 40 at 5.8 GHz for the HRS and the sapphire substrates, respectively. 80-nH inductors have Q' s as high as 13. The transmission-line losses are near 4 dB/cm at 10 GHz for microstrips, inverted microstrips, and coplanar lines, which are sufficiently small for maximum line lengths within typical silicon-chip areas. This paper shows that inductors with high Q's for lumped-element designs in the 1-10-GHz range and transmission lines with low losses for distributed-element designs beyond 10 GHz can be made available with the proposed adjustments to commercial silicon technology. © 1997 IEEE.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron