J.M.E. Harper, J.J. Cuomo, et al.
Journal of Applied Physics
We have investigated a Sb-enhanced solid phase epitaxy of Si on a p-type (100)Si substrate through intermixing of amorphous Si and Sb thin films and a subsequent recrystallization of the polycrystalline Si (poly-Si). By using cross-sectional transmission electron microscopy, we show that a high concentration of Sb enhances recrystallization of poly-Si, which eventually results in an epitaxial growth of Si. This is most likely due to an enhanced Si self-mobility caused by a Sb diffusion in the vicinity of the grain boundaries of the poly-Si. At the same time the doped layer was observed to serve as a diffusion source for doping the Si substrate. Secondary ion mass spectrometry measurements reveal the concentrations and the depth profiles of Sb in the Si substrate.
J.M.E. Harper, J.J. Cuomo, et al.
Journal of Applied Physics
S.E. Harnstrarn, D. Moy, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
P.A. Psaras, L. Hultman, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.R.A. Carlsson, L. Clevenger, et al.
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties