William M. J. Green, Solomon Assefa, et al.
PHOTINICS 2010
We report on a Si3N4-based surface-passivation technique for increasing free-carrier lifetimes in submicrometer silicon-on-insulator waveguides by up to 2 orders of magnitude. The carrier lifetime was measured by injecting free carriers into a critically coupled ring resonator through photoexcitation by short pump pulses and subsequently tracking the spectral detuning of the resonator during the carrier-recombination phase. Carrier lifetimes of up to 70 ns were obtained in waveguides passivated with a 45-nm-thick Si3N4coating. Such surface passivation is essential for low-power operation of optical switches based on carrier injection. © 2009 Optical Society of America.
William M. J. Green, Solomon Assefa, et al.
PHOTINICS 2010
William M.J. Green, Xiaoping Liu, et al.
CLEO 2008
Xiaoping Liu, Jeffrey B. Driscoll, et al.
CLEO 2009
Bejamin G. Lee, Xiaogang Chen, et al.
IEEE Photonics Technology Letters