Semiconductor dimensional metrology using the scanning electron microscope

Abstract

The use of scanning electron microscopy for surface structure and composition diagnostics in semiconductors is analyzed from both an optical and solid state perspective. Problems related to electron beam interaction with semiconductor surfaces from the standpoints of electron scattering and surface damage are examined. Equipment complexities and requirements are assessed. Critical dimension and pitch measurements using the technique are discussed along with measurements for linewidth and sidewall slope. Electron range calculations pertinent to microscope and semiconductor considerations are presented.