IEDM 2012
Conference paper

Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around

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While proven to provide high performance at sub-10 nm lengths, carbon nanotube (CNT) field-effect transistors (FETs) typically employ impractical gate geometries. Here we demonstrate fully self-aligned CNTFETs that include a gate-all-around (GAA) the nanotube channels-the ideal gate geometry for a 1D CNT. These GAA-CNTFETs have 30 nm channel lengths and exhibit n-type operation with high on-currents and good switching behavior that is explained by quantum transport (NEGF) simulations. This work is an important milestone showing that a technologically relevant self-aligned device can be realized with nanotubes. © 2012 IEEE.