VLSI Technology 2007
Conference paper

Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond

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Direct Silicon Bonded (DSB) technology is shown to be scalable for 32nm node and beyond for two integration schemes: Solid Phase Epitaxy (SPE)-before-Shallow Trench Isolation (STI) and STI-before-SPE. For SPE-before-STI, 32nm node ground rules can be met by thinning DSB thickness to ∼70nm, which ensures complete removal of boundary defects by STI. For STI-before-SPE, a scaling-independent solution is provided by the use of 45° rotated (100) base wafers which allow trench-defect-free SPE at the STI edges.