Record High Pockels Coefficient in PIC-Compatible BaTiO₃/Si Photonic Devices

Abstract

We unambiguously demonstrate the Pockels effect in integrated BaTiO3/Si devices and report the largest Pockels coefficient (r42=923±/V) of any thin-film material. We show a strong electro-optic response beyond 25 GHz and monolithic integration compatible with silicon photonic platforms.