ECOC 2018
Conference paper

Record High Pockels Coefficient in PIC-Compatible BaTiO3/Si Photonic Devices

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We unambiguously demonstrate the Pockels effect in integrated BaTiO3/Si devices and report the largest Pockels coefficient (r42=923±/V) of any thin-film material. We show a strong electro-optic response beyond 25 GHz and monolithic integration compatible with silicon photonic platforms.