Publication
Physical Review Letters
Paper

Reaction of Si(100) with NH3: Rate-limiting steps and reactivity enhancement via electronic excitation

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Abstract

We report on the low-temperature reaction of ammonia with Si(100)-(2×1). The dangling bonds in the clean Si surface promote NH3 dissociation even at temperatures as low as 90 K. The N atoms thus produced occupy subsurface sites, while the H atoms bind to surface Si atoms, tie up the dangling bonds, and inactivate the surface. Thermal or electronic-excitation- induced hydrogen desorption restores the dangling bonds and the reactivity of the surface. Silicon nitride film growth is achieved at 90 K by simultaneous exposure of the Si surface to NH3 and an electron beam. © 1986 The American Physical Society.

Date

01 Sep 1986

Publication

Physical Review Letters

Authors

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