Radiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates

Abstract

The radiation response of strained SiGe p-MODFETs to 63 MeV protons is investigated for the first time. It is observed that both the drain current and the transconductance of the devices improve (increase) marginally following proton exposure. Low-frequency noise measurements were made both before and after irradiation to better understand the role of traps, and also improves following exposure. Localized strain in high Ge content SiGe layers of the device may affect the trap density after irradiation. © 2009 IEEE.