Yu Gyeong Kang, Masatoshi Ishii, et al.
Advanced Science
Paper
Pulsed ion beam irradiation of silicon
Abstract
The effects of intense pulsed H+, B+ and Ba+ beam irradiation of single crystal Si and of ion implantation damaged Si have been studied by spreading resistance measurement, backscattering and channeling, and TEM. This paper reports the measurements and their correlation. The observations are fully consistent with ordinary melting and solidification of the upper layers of Si. © 1982.
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