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Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETsK.-L. LeeM.M. Franket al.2006VLSI Technology 2006
A comparison of electrical and physical properties of MOCVD hafnium silicate thin films deposited using various silicon precursorsP. JamisonM. Copelet al.2006MRS Spring Meeting 2006
High performance FDSOI CMOS technology with metal gate and high-kBruce DorisY.-H. Kimet al.2005VLSI Technology 2005
Systematic study of workfunction engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacksY.-H. KimC. Cabral Jr.et al.2005IEDM 2005
Role of oxygen vacancies in VFB/Vt stability of pFET metals on HfO2E. CartierF.R. McFeelyet al.2005VLSI Technology 2005
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodesR. JammyV. Narayananet al.2005ISTC 2005
Electron mobility dependence of W/HFO 2 gate stacks on interfacial layer preparationA.C. CallegariP. Jamisonet al.2005ECS Meeting 2005
HfO 2/metal stacks: Determination of energy level diagram, work functions & their dependence on metal depositionS. ZafarV. Narayananet al.2005VLSI Technology 2005