Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
We report the results of low-temperature photoluminescence measurements on a series of heavily-doped Si: As and Si: B samples. New spectra are obtained for very high doping levels (1019 2- 1020 cm-3), and the results for the more lightly doped samples are found to be in good agreement with previously published data. By comparing the luminescence of a Si: As sample before and after partial compensation with B, we verify that minority carriers can be localized even in "metallic" samples. © 1981.
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
K.A. Chao
Physical Review B
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Ronald Troutman
Synthetic Metals