SPIE Semiconductors 1992
Conference paper

Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon

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We have grown Si/Si1-xGex multiple quantum wells (x ≈ 8%) lattice- matched to silicon with well thicknesses between 3 and 20 nm using UHV-CVD. The sample parameters were obtained accurately with high-resolution x-ray diffraction (rocking curves) and transmission electron microscopy. From an analysis of the band-edge related photoluminescence energies we find a blue-shift due to confinement for thin wells.