About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
SPIE Semiconductors 1992
Conference paper
Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon
Abstract
We have grown Si/Si1-xGex multiple quantum wells (x ≈ 8%) lattice- matched to silicon with well thicknesses between 3 and 20 nm using UHV-CVD. The sample parameters were obtained accurately with high-resolution x-ray diffraction (rocking curves) and transmission electron microscopy. From an analysis of the band-edge related photoluminescence energies we find a blue-shift due to confinement for thin wells.