Nucleation of dislocations in SiGe layers
- P.M. Mooney
- F. Legoues
- et al.
- 1993
- MRS Fall Meeting 1993
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111 results for F.K. LeGoues
203 μa threshold current strained V-groove lasers
- S. Tiwari
- G.D. Pettit
- et al.
- 1992
- IEDM 1992
CHARACTERIZATION OF IC DEVICES FABRICATED IN LOW TEMPERATURE (550 degree C) EPITAXY BY UHV/CVD TECHNIQUE.
- T.N. Nguyen
- D.L. Harame
- et al.
- 1985
- IEDM 1985
Dislocation patterns in strained layers from sources on parallel glide planes
- K.W. Schwarz
- F.K. LeGoues
- 1997
- Physical Review Letters
Strain relief during growth: CaF2 on Si(111)
- R.M. Tromp
- F. Legoues
- et al.
- 1995
- Physical Review Letters
Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures
- K. Ismail
- F. Legoues
- et al.
- 1994
- Physical Review Letters
Cyclic growth of strain-relaxed islands
- F.K. LeGoues
- M.C. Reuter
- et al.
- 1994
- Physical Review Letters
LeGoues, Mooney, and Tersoff reply [2]
- F.K. LeGoues
- P.M. Mooney
- et al.
- 1994
- Physical Review Letters
Competing relaxation mechanisms in strained layers
- J. Tersoff
- F. Legoues
- 1994
- Physical Review Letters
Self-aligned sources for dislocation nucleation: The key to low threading dislocation densities in compositionally graded thin films grown at low temperature
- F.K. LeGoues
- 1994
- Physical Review Letters