About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Oxidation kinetics of YBa2Cu3O7-γ thin films in different oxidizing ambients
Abstract
The effectiveness of different oxidizer gases (O, O2, N2O and NO2) for the post-growth oxidation of YBa2Cu3O7-γ (YBCO) thin films is investigated. In particular, the oxidation process in the presence of atomic and molecular oxygen is analyzed based on a simple kinetic model involving oxygen adsorption, desorption, and interface transfer steps. It is argued that the high oxidation capability of atomic O is a result of its direct adsorption with very high sticking probability. As a result, the thermodynamic stability range of YBCO at a particular temperature is shifted to significantly lower pressures in an atomic O plasma. On the basis of the known surface decomposition characteristics of N2O and NO2, the possible oxidation behavior of YBCO films in the presence of these gases is also discussed. © 1993.