About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Conference paper
Origin of contaminants in metal films photochemically deposited from the metal hexacarbonyls.
Abstract
Research directed toward understanding the source of contaminants in photochemically grown films is reported. Cr, Mo, and W films have been deposited onto silicon substrates by photolysis of their corresponding hexacarbonyls with CW 257-nm light over a range of 1-5000 W/cm2 in a chamber with a base pressure of 10-8 Torr. Films from all three metals exhibit ripples (1000-3000-angstrom-wide), indicating the predominance of surface photochemistry. Samples were also prepared in rough vacuum (10-4 Torr) and transported in air for comparison. Air-exposed Cr films are 30-35% Cr and 60-70% O; carbon is not detected. Those not exposed to air show appreciable amounts of C and reduced amounts of O, indicating that the presence of air alters the composition of the films. Similar variations are found for Mo and W. Film growth due to gas-phase photolysis is compared with that from surface photolysis. Quantitative differences in composition indicate that photoreactions taking place at the surface are distinctive.