Alberto Ferraris, Eunjung Cha, et al.
Communications Engineering
We report the impact from channel composition on the cryogenic low-noise performance at low dc power for a 100-nm gate-length InGaAs-InAlAs-InP high-electron mobility transistor (HEMT). Two indium (In) channel compositions, 65% and 80%, were studied by dc and RF characterization at 300 and 5 K. For the cryogenic low-noise optimization, it was important to increase the transconductance to gate-source capacitance ratio in the weak inversion region implying that a higher maximum cutoff frequency in the HEMT does not guarantee lower noise. The HEMT noise performance was obtained from noise measurements in a hybrid three-stage 4-8-GHz (C-band) low-noise amplifier (LNA) down to 300-μW dc power dissipation. While the HEMT LNA noise performance for both the channel compositions at 300 K was found to be comparable, the HEMT LNA at 5 K with 65% In channel showed a minimum noise temperature of 1.4 K, whereas the noise temperature in the HEMT LNA with 80% In channel HEMTs increased to 2.4 K. The difference in the noise became more pronounced at reduced dc power dissipation. The ultralow dc power of 300 μ W demonstrated for a cryogenic C-band LNA with an average noise temperature of 2.9 K and 24-dB gain is of interest for future qubit read-out electronics at 4 K.
Alberto Ferraris, Eunjung Cha, et al.
Communications Engineering
Francesco Serra Di Santa Maria, Christoforos Theodorou, et al.
ESSDERC 2022
Cezar Zota, Alberto Ferraris, et al.
Nature Electronics
Giacomo Graziano, Alberto Ferraris, et al.
IEEE T-ED