About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
ESSDERC 2022
Conference paper
In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications
Abstract
This work presents a detailed electrical characterization of planar InGaAs on Silicon MOSFETs from room temperature down to cryogenic temperatures (10 K). The main temperature-dependent electrical parameters of MOSFET operation (threshold voltage Vt, low-field mobility \mu 0, and subthreshold swing SS) were extracted in both linear and saturation regions through the consolidated Y-function method, for gate lengths down to 10 nm. The extracted parameters are first analyzed versus temperature and length and then compared against a more mature technology such as Silicon FDSOI MOSFETs. The work provides insight into the cryogenic operation of III-V MOSFETs and indicates a competing advantage versus Si CMOS for low-power cryogenic quantum computer applications.