Ronald Troutman
Synthetic Metals
The observation of discrete pair line emission and the analysis of the spectra from Ge donor - C acceptor and S donor - Ge acceptor pairs in GaP is reported. The Ge donor binding energy is 0.200 ± 0.002 eV and the Ge acceptor binding energy is 0.258 ± 0.002 eV. The bound exciton recombination at neutral Ge donors was observed at 2.265 eV corresponding to an exciton binding energy of 0.063 eV. This is the most tightly donor bound exciton observed in GaP. © 1972.
Ronald Troutman
Synthetic Metals
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications