Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Angle-resolved photoelectron spectroscopy and k-resolved inverse photoemission have been used to study the electronic structure of the Si(100)×1 surface. For both techniques, one occupied and one unoccupied surface-state band has been mapped along the [010] and [011] directions. The surface shows semiconducting behavior with an estimated minimum band gap of 1.45 eV along the [010] direction. © 1993 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
R. Ghez, J.S. Lew
Journal of Crystal Growth
Hiroshi Ito, Reinhold Schwalm
JES
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025